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HN4B102J
TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)
HN4B102J
MOS Gate Drive Applications Switching Applications
* * * *
+0.2 2.8 -0.3
Unit: mm
Small footprint due to a small and thin package High DC current gain : PNP hFE = 200 to 500 (IC =0.2 A) : NPN Low collector-emitter saturation High-speed switching
2.90.2 1.90.2
+0.2 1.6 -0.1
0.95
: NPN
VCE (sat) = 0.14 V (max)
2 3
: PNP tf = 40 ns (typ.) : NPN tf = 45 ns (typ.)
4
Absolute Maximum Ratings (Ta = 25C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (t = 10 s) Collector power dissipation (DC) Junction temperature Storage temperature range Single-device operation Single-device operation DC (Note 1) Symbol VCBO VCEO VEBO IC ICP IB PC (Note 2) PC (Note 2) Tj Tstg Rating PNP -30 -30 -7 -1.8 -8.0 -0.5 1.1 0.75 150 -55 to 150 NPN 60 30 7 2.0 8.0 0.5 V V V A A W W C C Unit
+0.2 1.1 -0.1
1. Base 2. Emitter 3. Base 4. Collector 5. Collector
(Q1 PNP) (Q1 PNP/Q2 NPN) (Q2 NPN) (Q2 NPN) (Q1 PNP)
JEDEC JEITA TOSHIBA
Pulse (Note 1)
2-3L1A
Weight: 0.014g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Figure 1
Circuit Configuration (top view)

Figure 2
Marking
Part No. (or abbreviation code)
5
0~0.1

L
2009-06-17
Q1 (PNP)
Q2 (NPN)
1
+0.1 0.16 -0.06
0.40.1
: PNP
VCE (sat) =0.20 V (max)
0.95
hFE = 200 to 500 (IC = 0.2 A)
1
5
HN4B102J
Electrical Characteristics (Ta = 25C)
PNP
Characteristic Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain hFE (2) hFE (3) Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = -30 V, IE = 0 VEB = -7 V, IC = 0 IC = -10 mA, IB = 0 VCE = -2 V, IC = -0.2 A VCE = -2 V, IC = -0.6 A VCE = -2 V, IC = -2.0 A IC = -0.6 A, IB = -20 mA IC = -0.6 A, IB = -20 mA VCB = -10 V, IE = 0, f = 1MHz See Figure 3 circuit diagram VCCi-18 V, RL = 30 IB1 = IB2 = 20 mA Min -30 200 125 40 Typ. 16.5 40 280 40 Max -100 -100 500 -0.20 -1.10 ns V V pF Unit nA nA V
NPN
Characteristic Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain hFE (2) hFE (3) Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = 60 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.2 A VCE = 2 V, IC = 0.6 A VCE = 2 V, IC = 2.0 A IC = 0.6 A, IB = 20 mA IC = 0.6 A, IB = 20 mA VCB = 10 V, IE = 0, f = 1MHz See Figure 4 circuit diagram VCC18 V, RL = 30 IB1 = IB2 = 20 mA Min 30 200 125 40 Typ. 14 45 580 45 Max 100 100 500 0.14 1.10 ns V V pF Unit nA nA V
Figure 3. Switching Time Test Circuit & Timing Chart
VCC 20s RL IB2 IB1 IB1 Input Duty cycle 1% IB2
Figure 4. Switching Time Test Circuit & Timing Chart
VCC 20s RL IB1 Output
Output IB2 Input Duty cycle 1%
IB1
IB2
2
2009-06-17
HN4B102J
PNP
IC - VCE
-2 -20 -10 -8 -6 1000
hFE - IC
Ta = 100C
(A)
-1.6
IC
hFE
300 -55C 100
25C
Collector current
-5 -4 -0.8 -3 -2 -0.4 IB =- 1 mA 0 0 -0.4 -0.8 Common emitter Ta = 25C Single nonrepetitive pulse -1.2 -1.6 -2
DC current gain
-1.2
30 Common emitter VCE = -2 V Single nonrepetitive pulse -0.01 -0.1 -1 -10
10
-0.001
Collector-emitter voltage
VCE
(V)
Collector current
IC
(A)
VCE (sat) - IC
-1
VBE (sat) - IC
-10 Common emitter IC/IB = 30 Single nonrepetitive pulse
Collector-emitter saturation voltage VCE (sat) (V)
Common emitter IC/IB = 30 Single nonrepetitive pulse
-0.3
Base-emitter saturation voltage VBE (sat) (V)
-3
-0.1
-1
Ta = -55C
-0.03
Ta = 100C
-55C 25C
-0.3
25C
100C
-0.01 -0.001
-0.01
-0.1
-1
-10
-0.1 -0.001
-0.01
-0.1
-1
-10
Collector current
IC
(A)
Collector current
IC
(A)
IC - VBE
-2 Common emitter VCE = -2 V Single nonrepetitive pulse
Safe operating area
-10 IC max (pulse) * IC max (pulse) * 10 s*
-1.6
(A)
(A)
100 ms* 100s* -1 IC max (continuous)* DC operation Ta = 25C 10 s* -0.1 *: Single nonrepetitive pulse Ta = 25C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren't mounted on an FR4 board (glass-epoxy, 1.6 mm thick, Cu area: 645 mm2). Single-device operation These characteristic curves must be derated linearly with increase in temperature. -0.1 -1 -10 10 ms*
IC
-1.2 Ta = 100C -0.8 -55C
Collector current
Collector current
IC
1 ms*
-0.4
25C
0 0 -0.4 -0.8 -1.2 -1.6 -0.01
Base-emitter voltage
VBE
(V)
VCEO max -100
Collector-emitter voltage
VCE
(V)
3
2009-06-17
HN4B102J
NPN
IC - VCE
2 20 10 8 6 1.2 5 4 0.8 3 2 IB = 1 mA 0 0 0.4 0.8 Common emitter Ta = 25C Single nonrepetitive pulse 1.2 1.6 2 1000
hFE - IC
(A)
1.6
Ta = 100C
hFE
300 25C -55C
IC
Collector current
DC current gain
100
0.4
30 Common emitter VCE = 2 V Single nonrepetitive pulse 10 0.001 0.01 0.1 1 10
Collector-emitter voltage
VCE
(V)
Collector current
IC
(A)
VCE (sat) - IC
1
VBE (sat) - IC
10 Common emitter IC/IB = 30 Single nonrepetitive pulse
Collector-emitter saturation voltage VCE (sat) (V)
0.3
Base-emitter saturation voltage VBE (sat) (V)
Common emitter IC/IB = 30 Single nonrepetitive pulse
3
0.1
1
Ta = -55C
-55C 0.03 Ta = 100C 25C
100C 0.3 25C
0.01 0.001
0.1 0.01 0.1 1 10 0.001 0.01 0.1 1 10
Collector current
IC
(A)
Collector current
IC
(A)
IC - VBE
2 Common emitter VCE = 2 V Single nonrepetitive pulse 10
Safe operating area
IC max (pulse) * IC max (pulse) * 100 ms* 10s*
(A)
1.6
(A)
IC
Collector current
1.2 Ta = 100C 0.8 -55C
IC
1
IC max (continuous)* DC operation Ta = 25C 10 s*
100s*
Collector current
1 ms*
0.4
25C
0.1
0
0.4
0.8
1.2
1.6
Base-emitter voltage
VBE
(V)
0.01
0.1
1
10
VCEO max 100
0
*: Single nonrepetitive pulse Ta = 25C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren't mounted on an FR4 board (glass-epoxy, 1.6 mm thick, Cu area: 645 2 mm ). Single-device operation These characteristic curves must be derated linearly with increase in temperature.
10 ms*
Collector-emitter voltage
VCE
(V)
4
2009-06-17
HN4B102J
Common
rthtw
1000
Transient thermal resistance rth(j-a) (C/W)
100
10 Curves apply only to limited areas of thermal resistance. Single nonepetitive pulse Ta = 25C Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) Single-device operation 1 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw
(s)
5
2009-06-17
HN4B102J
RESTRICTIONS ON PRODUCT USE
* Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. * Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. * Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. * The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. * ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. * Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.
6
2009-06-17

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